Stanford Microsystems Laboratory - Recent changes [en]

Publications

Petzold — Sat, 21 Nov 2009 22:22:46 GMT

Conference Publications:

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	==Conference Publications==		==Conference Publications==
-	B.C. Petzold, S.-J. Park, P. Ponce, M.B. Goodman, B.L. Pruitt, The Contribution of Body Wall Muscles to ''C. elegans'' Body Mechanics Determined Using Piezoresistive Microcantilevers, Proceedings of MicroTAS, Jeju, Korea, 2009.	+	B.C. Petzold, S.-J. Park, P. Ponce, M.B. Goodman, B.L. Pruitt, "[http://microsystems.stanford.edu/Shared_Files/publications/Petzold_MicroTAS2009_BWM.pdf The Contribution of Body Wall Muscles to ''C. elegans'' Body Mechanics Determined Using Piezoresistive Microcantilevers]," Proceedings of MicroTAS, Jeju, South Korea, 2009.

	P. Bächtold, C.S. Simmons, J.Y. Sim, S. Haniff, and B.L. Pruitt, "Strain Array for Cell Culture," Proceedings of MicroTAS, Jeju, South Korea, 2009.		P. Bächtold, C.S. Simmons, J.Y. Sim, S. Haniff, and B.L. Pruitt, "Strain Array for Cell Culture," Proceedings of MicroTAS, Jeju, South Korea, 2009.

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Simba85 — Sat, 21 Nov 2009 22:22:18 GMT

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	__NOTOC__		__NOTOC__
	<div class="floatright">		<div class="floatright">
-	<table id="toc" class="toc" summary="pContents" align="right"><tr><td>	+	<table Followscroll=1 id="toc" class="toc" summary="pContents" align="right"><tr><td>
	<h2><center>'''[[Projects\|Project Contents]]'''</center></h2>		<h2><center>'''[[Projects\|Project Contents]]'''</center></h2>
	1. [[MEMS Device Development and Metrologies]]		1. [[MEMS Device Development and Metrologies]]

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Petzold — Sat, 21 Nov 2009 22:14:20 GMT

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	**3. [http://microsystems.stanford.edu/wiki/Understanding_the_Sense_of_Touch#Experimental_Overview Experimental Overview]		**3. [http://microsystems.stanford.edu/wiki/Understanding_the_Sense_of_Touch#Experimental_Overview Experimental Overview]
	**4. [http://microsystems.stanford.edu/wiki/Understanding_the_Sense_of_Touch#Methods Methods]		**4. [http://microsystems.stanford.edu/wiki/Understanding_the_Sense_of_Touch#Methods Methods]
-	***a. [http://microsystems.stanford.edu/wiki/Understanding_the_Sense_of_Touch#Piezoresistive_Cantilever_Force-~~&/Displacement~~-Clamp Piezoresistive Cantilever Force-/Displacement-Clamp]	+	***a. [http://microsystems.stanford.edu/wiki/Understanding_the_Sense_of_Touch#Piezoresistive_Cantilever_Force-_and_Displacement-Clamp Piezoresistive Cantilever Force- and Displacement-Clamp]
	***b. [http://microsystems.stanford.edu/wiki/Understanding_the_Sense_of_Touch#Fast_Piezoresistive_Probes Fast Piezoresistive Probes]		***b. [http://microsystems.stanford.edu/wiki/Understanding_the_Sense_of_Touch#Fast_Piezoresistive_Probes Fast Piezoresistive Probes]
	***c. [http://microsystems.stanford.edu/wiki/Understanding_the_Sense_of_Touch#Dissociated_Touch_Receptor_Neuron_Assays Dissociated Touch Receptor Neuron Assays]		***c. [http://microsystems.stanford.edu/wiki/Understanding_the_Sense_of_Touch#Dissociated_Touch_Receptor_Neuron_Assays Dissociated Touch Receptor Neuron Assays]
	***d. [http://microsystems.stanford.edu/wiki/Understanding_the_Sense_of_Touch#Electrostatic_Actuator_Systems_for_Whole_Nematode_Mechanics_Measurements Electrostatic Actuator Systems for Whole Nematode Mechanics Measurements]		***d. [http://microsystems.stanford.edu/wiki/Understanding_the_Sense_of_Touch#Electrostatic_Actuator_Systems_for_Whole_Nematode_Mechanics_Measurements Electrostatic Actuator Systems for Whole Nematode Mechanics Measurements]
-	***e. [http://microsystems.stanford.edu/wiki/Understanding_the_Sense_of_Touch#~~Touch_Receptor_Neuron_Structure/MEC~~-4_Complex_Localization Touch Receptor Neuron Structure/MEC-4 Complex Localization]	+	***e. [http://microsystems.stanford.edu/wiki/Understanding_the_Sense_of_Touch#Touch_Receptor_Neuron_Structure_and_MEC-4_Complex_Localization Touch Receptor Neuron Structure and MEC-4 Complex Localization]
	***f. [http://microsystems.stanford.edu/wiki/Understanding_the_Sense_of_Touch#SU-8_Force_Sensing_Pillar_Arrays SU-8 Force Sensing Pillar Arrays]		***f. [http://microsystems.stanford.edu/wiki/Understanding_the_Sense_of_Touch#SU-8_Force_Sensing_Pillar_Arrays SU-8 Force Sensing Pillar Arrays]
	<br><br>		<br><br>

Understanding the Sense of Touch

Petzold — Sat, 21 Nov 2009 22:12:34 GMT

Understanding the Sense of Touch: Assaying Mechanotransduction in Caenorhabditis elegans:

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-	====Piezoresistive Cantilever Force-/Displacement-Clamp ====	+	====Piezoresistive Cantilever Force- and Displacement-Clamp ====
	<font color = "green">'''☐'''</font><font color = "orange">'''☐'''</font><font color = "blue">'''☐'''</font>		<font color = "green">'''☐'''</font><font color = "orange">'''☐'''</font><font color = "blue">'''☐'''</font>

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	* Device redesign and fabrication ([http://microsystems.stanford.edu/wiki/User:Pponce Pierre])		* Device redesign and fabrication ([http://microsystems.stanford.edu/wiki/User:Pponce Pierre])

-	====Touch Receptor Neuron Structure/MEC-4 Complex Localization====	+	====Touch Receptor Neuron Structure and MEC-4 Complex Localization====

	<font color = "green">'''☐'''</font><font color = "red">'''☐'''</font>		<font color = "green">'''☐'''</font><font color = "red">'''☐'''</font>

Template:Project intro

Petzold — Sat, 21 Nov 2009 22:11:21 GMT

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	**6. [[MEMS_Device_Development_and_Metrologies#Electrostatic_actuators_for_cell_mechanics_measurements\|Electrostatic actuators for cell mechanics measurements]]		**6. [[MEMS_Device_Development_and_Metrologies#Electrostatic_actuators_for_cell_mechanics_measurements\|Electrostatic actuators for cell mechanics measurements]]
	**7. [[Polymer MEMS]]		**7. [[Polymer MEMS]]
-	2. [[Understanding the Sense of Touch]]	+	<br><br>
-	**1. [[Background]]	+	2. [http://microsystems.stanford.edu/wiki/Understanding_the_Sense_of_Touch Understanding the Sense of Touch]
-	**2. [[Experimental Overview]]	+	**1. [http://microsystems.stanford.edu/wiki/Understanding_the_Sense_of_Touch#Introduction Introduction]
-	**3. [[Methods]]	+	**2. [http://microsystems.stanford.edu/wiki/Understanding_the_Sense_of_Touch#Background Background]
-	***a. [[Piezoresistive Cantilever Force-/Displacement-Clamp]]	+	**3. [http://microsystems.stanford.edu/wiki/Understanding_the_Sense_of_Touch#Experimental_Overview Experimental Overview]
		+	**4. [http://microsystems.stanford.edu/wiki/Understanding_the_Sense_of_Touch#Methods Methods]
		+	***a. [http://microsystems.stanford.edu/wiki/Understanding_the_Sense_of_Touch#Piezoresistive_Cantilever_Force-&/Displacement-Clamp Piezoresistive Cantilever Force-/Displacement-Clamp]
		+	***b. [http://microsystems.stanford.edu/wiki/Understanding_the_Sense_of_Touch#Fast_Piezoresistive_Probes Fast Piezoresistive Probes]
		+	***c. [http://microsystems.stanford.edu/wiki/Understanding_the_Sense_of_Touch#Dissociated_Touch_Receptor_Neuron_Assays Dissociated Touch Receptor Neuron Assays]
		+	***d. [http://microsystems.stanford.edu/wiki/Understanding_the_Sense_of_Touch#Electrostatic_Actuator_Systems_for_Whole_Nematode_Mechanics_Measurements Electrostatic Actuator Systems for Whole Nematode Mechanics Measurements]
		+	***e. [http://microsystems.stanford.edu/wiki/Understanding_the_Sense_of_Touch#Touch_Receptor_Neuron_Structure/MEC-4_Complex_Localization Touch Receptor Neuron Structure/MEC-4 Complex Localization]
		+	***f. [http://microsystems.stanford.edu/wiki/Understanding_the_Sense_of_Touch#SU-8_Force_Sensing_Pillar_Arrays SU-8 Force Sensing Pillar Arrays]
	<br><br>		<br><br>
	3. [[Advanced Cell and Tissue Culture Systems to Study Mechanobiology]]		3. [[Advanced Cell and Tissue Culture Systems to Study Mechanobiology]]

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Simba85 — Sat, 21 Nov 2009 21:49:01 GMT

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	<div class="floatright">		<div class="floatright">
-	<table id="toc" class="toc" summary="pContents" align="right" ><tr><td>	+	<table id="toc" class="toc" summary="pContents" align="right"><tr><td>
	<h2><center>'''[[Projects\|Project Contents]]'''</center></h2>		<h2><center>'''[[Projects\|Project Contents]]'''</center></h2>
	1. [[MEMS Device Development and Metrologies]]		1. [[MEMS Device Development and Metrologies]]

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Petzold — Sat, 21 Nov 2009 21:15:36 GMT

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	**7. [[Polymer MEMS]]		**7. [[Polymer MEMS]]
	2. [[Understanding the Sense of Touch]]		2. [[Understanding the Sense of Touch]]
		+	**1. [[Background]]
		+	**2. [[Experimental Overview]]
		+	**3. [[Methods]]
		+	***a. [[Piezoresistive Cantilever Force-/Displacement-Clamp]]
	<br><br>		<br><br>
	3. [[Advanced Cell and Tissue Culture Systems to Study Mechanobiology]]		3. [[Advanced Cell and Tissue Culture Systems to Study Mechanobiology]]

User:Clifton

Simba85 — Sat, 21 Nov 2009 02:48:43 GMT

changed group membership for User:Clifton from (none) to restrict and viewrestrict New lab member

New page

Basic Cell Culture Reference

Cindy — Sat, 21 Nov 2009 00:48:21 GMT

General check list for working in the TC room::

New page

==General check list for working in the TC room:==

1. Spray down hood with 70% EtOH before and after use

2. Everything that gets put into the hood is sprayed and wiped down with 70% EtOH

3. Check that you have media, trypsin, PBS, etc before you start

4. Warm up all solutions that cells will encounter (by warming everything up in a 37C water bath, cells are not exposed to temperature stresses) (~15-20min)

5. Open up bags of Petri-dishes and anything that is not fully sealed under the hood.

6. Do not touch sterile cell culture items (flasks, dishes, falcon tubes, etc) without gloves.

7. Treat only the air that is flowing in the TC hood as sterile.

8. Set up your work area before you start to minimize obstructions to air flow and reaching over open containers

9. When cleaning up, rinse tube with 70% EtOH, turn off the vacuum line, empty out the trap (with bleach, water, and EtOH, sequentially), cover the scope

==Use these cell procedures as a general guide. Please follow any cell protocols that are provided by the cell supplier as each cell type will require special care.==

==Thawing Cells:==

1. Warm up media

2. Add 5 ml media into a 15 ml tube

3. Add 5ml media into a 100mm Petri dish

4. Get cells from cryo-storage

5. Thaw cells in 37C water bath until a little bit of ice remains (~1-2min)

6. Add cell suspension into your 15 ml tube with media

7. Spin down at 500xg for 5-10 minutes, aspirate media, resuspend in 5ml

8. Add cell/media suspension to the 100mm Petri dish (total = 10ml)

By spinning down and resuspending you remove the DMSO in the freezing solution that can be toxic to cells.
Each frozen vial contains cells equaling a confluent 100mm dish in 1ml of freezing solution (95% Calf Serum, 5% DMSO). DMSO prevents crystallization of water that will cause cells to lyse during cryopreservation. Serum is used to dilute the DMSO, because it is toxic, and to act as a cushion of cells during the thawing process providing nutrients.

==Plating and Passaging/Splitting Cells:==

1. Warm up media, sterile PBS, 0.05% trypsin [see table for volumes]

2. Aspirate off media (place tip to the side of the dish, careful not to disturb cells)

3. Wash with sterile PBS and aspirate off

4. Add trypsin [see table for volumes] and incubate for 1min, then aspirate off trypsin (If trypsin is left on too long, cells will start to detach. When this happens, do not aspirate as you will lose cells in the process. Instead, continue to incubate for 5 min at 37C, but neutralize with equal volume of serum-containing media as trypsin.)

5. Incubate at 37C for 5 min

6. Wash cells off with serum-containing media (serum neutralizes the remaining trypsin)

7. Spin down at 500xg for 5-10 min, aspirate media, resuspend in PBS/media

8. For plating, count cells with a hemacytometer [see Cell Counting], plate cells at appropriate cell density

9. For passaging/splitting cells, see table for cell splitting, and follow values for appropriate cell type

By keeping the passaging consistent, we have a better gage on growth rates and number of cell doublings. Avoid making bubbles, these provide shear stresses to sensitive cells. To do this, keep some media in the pipet while mixing; this will minimize bubbles. If the T-150 is not vented, crack open the lid of the T-flask after placing into the incubator to allow for gas exchange.

{| class="wikitable"
||culture
|culture area, cm^2
|media, ml
|PBS wash, ml
|Trypsin, ml
|-
|T-150
|150
|25
|10
|8
|-
|10cm dish
|56
|10
|4-5
|2
|-
|6-well plate
|9.5
|2
|2
|0.5
|-
|12-well plate
|3.8
|1
|1
|0.2
|-
|24-well plate
|1.9
|1
|0.5
|0.1
|-
|96-well plate
|~0.32
|0.1
|.1
|0.2
|}

==Cell Counting:==

1. Take 10ul of cell suspension and combine with PBS and trypan blue, and mix

{| class="wikitable"
||
|5x dilution
|10x dilution
|-
|PBS
|20ul
|50ul
|-
|Cell Suspension
|10ul
|10ul
|-
|Trypan Blue
|20ul
|40ul
|}

2. Take 10ul of your cell/trypan blue solution and pipet into the hemacytometer using capillary action

3. Count live and dead cells in 5 squares (4 corners + middle square) – live cells should looks like round circles, dead cells should look blue and less circular

4. Take the sum of the live cells counted in the 5 squares, divide it by the number of squares (5), multiply by the dilution factor, and multiply by 104. This gives you cells/ml. Multiply by volume of cells to get total cell #.
e.g. If you take 2 plates and make a 2ml cell suspension volume and used a 5x dilution:
cell count: 200 / (5 squares) x 5 dilution factor x 104 = 2x106 cells/ml
2x106 cells/ml x 2ml = 4x106 cells total

5. To clean the hemacytometer, rinse with water and 70% EtOH, wipe hemacytometer and glass coverslip with a kimwipe and replace in case.

Trypan blue penetrates dead cells for visualization. You should have at least 90% viability to use for your experiments.

==Feeding Cells:==

1. Check viability and morphology of the cells under the microscope

2. Aspirate off media

3. Replace with fresh media (avoid adding media directly on top of the cells, add media to the side of the dish; if working with T-flasks, add media to the side without cells) [see table with media volumes for your culture dish]

4. Check cells under scope

5. Place cells back into incubator, and check to see that there is water in the incubator

==Freezing Cells:==

1. Take confluent 100mm dish

2. Rinse with 4-5ml sterile PBS

3. Trypsinize with 2ml trypsin, incubate for 1min, aspirate, incubate at 37C for 5 min

4. Wash off cells with serum-containing media

5. Spin down at 500xg for 5-10min

6. Aspirate, resuspend in 1ml of freezing solution, aliquot 1ml per cryovial

7. Freeze in -80C overnight

8. Transfer to liquid nitrogen storage

Do not put in liquid nitrogen directly. This will kill cells. When freezing down cells you want to progress through a slow freeze.

==Waste:==

Red biohazard bucket under hood = anything that has touched cells
Red biohazard sharps = all sharps that have touched cells e.g. used Pasteur pipettes
Normal trash = anything that is not sharp and has not touched cells

Avoid putting non-sharps in biohazard sharps containers. A cost is associated per bucket for biohazard sharps waste disposal.

==Labeling:==

1. Label with “Item name” “concentration” “Lot number” “Date” and “Initials.”

2. Label flasks, culture dishes, etc with “Cell-type”, “Passage Number”, “Date” and “Initials”

User:Simba85

Jcdoll — Fri, 20 Nov 2009 19:15:26 GMT

changed group membership for User:Simba85 from restrict, Sysops and viewrestrict to restrict, Sysops, viewrestrict and Bureaucrats

New page

Template:Project intro

Jcdoll — Fri, 20 Nov 2009 02:31:05 GMT

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	<table id="toc" class="toc" summary="pContents" align="right" ><tr><td>		<table id="toc" class="toc" summary="pContents" align="right" ><tr><td>
	<h2><center>'''[[Projects\|Project Contents]]'''</center></h2>		<h2><center>'''[[Projects\|Project Contents]]'''</center></h2>
-	1. [[~~MEMS_Device_Development_and_Metrologies\|~~MEMS Device Development and Metrologies]]	+	1. [[MEMS Device Development and Metrologies]]
-	**1.[[~~Piezoresistor_Design_and_Optimization\|~~Piezoresistor Design and Optimization]]	+	**1. [[Piezoresistor Design and Optimization]]
-	**2.[[~~Coaxial_Tip_Piezoresistive_Scanning_Probes\|~~Coaxial Tip Piezoresistive Scanning Probes]]	+	**2. [[Coaxial Tip Piezoresistive Scanning Probes]]
-	**3.[[~~Ultrasmall_Cantilevers_for_Magnetic_Resonance_Force_Microscopy\|~~Ultrasmall Cantilevers for Magnetic Resonance Force Microscopy ]]	+	**3. [[Chemical Sensing Using Piezoresistive Cantilevers]]
-	**4.[[~~Chemical_Sensing_Using_Piezoresistive_Cantilevers\|Chemical Sensing Using Piezoresistive Cantilevers~~]]	+	**4. [[Ultrasmall Cantilevers for Magnetic Resonance Force Microscopy ]]
-	**5.[[MEMS_Device_Development_and_Metrologies#Electrostatic_actuators_for_cell_mechanics_measurements\|Electrostatic actuators for cell mechanics measurements]]	+	**5. [[AlN on Ti for Piezoelectric Transduction]]
-	**6.[[~~Polymer_MEMS\|~~Polymer MEMS]]	+	**6. [[MEMS_Device_Development_and_Metrologies#Electrostatic_actuators_for_cell_mechanics_measurements\|Electrostatic actuators for cell mechanics measurements]]
-	2. [[~~Understanding_the_Sense_of_Touch\|~~Understanding the Sense of Touch]]	+	**7. [[Polymer MEMS]]
		+	2. [[Understanding the Sense of Touch]]
	<br><br>		<br><br>
-	3. [[~~Advanced_Cell_and_Tissue_Culture_Systems_to_Study_Mechanobiology\|~~Advanced Cell and Tissue Culture Systems to Study Mechanobiology]]	+	3. [[Advanced Cell and Tissue Culture Systems to Study Mechanobiology]]
-	**1.[[~~Dynamic_Culture_for_Enhancing_in_vitro_Cardiomyocyte_Organization_and_Function\|~~Dynamic Culture for Enhancing in vitro Cardiomyocyte Organization and Function]]	+	**1. [[Dynamic Culture for Enhancing in vitro Cardiomyocyte Organization and Function]]
-	**2.[[~~Microfluidic_Stretchable_Cell_Culture_Array\|~~Microfluidic Stretchable Cell Culture Array]]	+	**2. [[Microfluidic Stretchable Cell Culture Array]]
-	**3.[[~~Biomechanical_Characterization_of_Cardiomyocytes\|~~Biomechanical Characterization of Cardiomycytes]]	+	**3. [[Biomechanical Characterization of Cardiomycytes]]

	</td></tr></table></div>		</td></tr></table></div>

MEMS Device Development and Metrologies

Jcdoll — Fri, 20 Nov 2009 02:27:21 GMT

oops

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User:Jcdoll

Jcdoll — Fri, 20 Nov 2009 02:03:58 GMT

Joey Doll:

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	In esssence, my work is focused on making a better tool for poking individual neurons. This specifically means a device with a rise time on the order of one microsecond and force resolution of 10s of pN and capable of closed loop force control, all while operating in saline solution. Our group collaborates heavily with the [http://wormsense.stanford.edu Goodman] lab.		In esssence, my work is focused on making a better tool for poking individual neurons. This specifically means a device with a rise time on the order of one microsecond and force resolution of 10s of pN and capable of closed loop force control, all while operating in saline solution. Our group collaborates heavily with the [http://wormsense.stanford.edu Goodman] lab.
-

	===Mentees===		===Mentees===
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	[[Users:Alexandre.haemmerli\|Alex Haemmerli]] - Fall 2008 <br>		[[Users:Alexandre.haemmerli\|Alex Haemmerli]] - Fall 2008 <br>
	[[Users:Purnimag\|Purnima Ghale]] - Summer 2008 - current		[[Users:Purnimag\|Purnima Ghale]] - Summer 2008 - current
-

	===Relevant Journal Publications===		===Relevant Journal Publications===

-	J. C. Doll, S.-J. ~~Park~~, A.~~J. Rastegar~~, ~~N. Harjee, J.~~R. ~~Mallon Jr.~~, ~~G. Hill, A.A. Barlian and~~ B.L. Pruitt, "~~Force sensing optimization and applications~~," ~~to appear~~ in ~~Advanced Materials~~ and ~~Technologies for Micro/Nano-Devices, Sensors and Actuator, Springer expected publication November 2009.~~	+	J.C. Doll, B.C. Petzold, B. Ninan, R. Mullapudi, B.L. Pruitt, "Aluminum Nitride on Titanium for CMOS Compatible Piezoelectric Transducers," accepted for publication in the Journal of Micromechanics and Microengineering

-	J.~~C. Doll~~, B.C. ~~Petzold~~, B. ~~Ninan, R~~. ~~Mullapudi~~, B.L. Pruitt, "~~Aluminum Nitride on Titanium for CMOS Compatible Piezoelectric Transducers~~," ~~submitted August 2009~~.	+	S.-J. Park, J.C. Doll, A.J. Rastegar, and B.L. Pruitt, "Piezoresistive cantilever performance, part II: optimization," accepted for publication in Journal of Microelectromechanical Systems.

-	~~J.C. Doll,~~ S.-J. Park, and B.L. Pruitt, "~~Design optimization of piezoresistive cantilevers~~ for ~~force sensing in air and water~~," ~~JAP,~~ in ~~press. [http://microsystems.stanford~~.~~edu/piezod (Free Matlab design optimization code)]~~	+	S.-J. Park, J.C. Doll, and B.L. Pruitt, "Piezoresistive cantilever performance, part I: analytical model for sensitivity," accepted for publication in Journal of Microelectromechanical Systems.

-	S.-J. Park, J.~~C. Doll~~, A.J. ~~Rastegar~~, and B.L. Pruitt, "~~Piezoresistive cantilever performance, part II:~~ optimization," ~~submitted April~~ 2009.	+	J. C. Doll, S.-J. Park, A.J. Rastegar, N. Harjee, J.R. Mallon Jr., G. Hill, A.A. Barlian and B.L. Pruitt, "Force sensing optimization and applications," to appear in Advanced Materials and Technologies for Micro/Nano-Devices, Sensors and Actuator, Springer expected publication November 2009.

-	S.-J. Park~~, J.C. Doll~~, and B.L. Pruitt, "~~Piezoresistive cantilever performance, part I: analytical model~~ for ~~sensitivity~~," ~~submitted April 2009~~.	+	J.C. Doll, S.-J. Park, and B.L. Pruitt, "Design optimization of piezoresistive cantilevers for force sensing in air and water," JAP, in press. [http://microsystems.stanford.edu/piezod (Free Matlab design optimization code)]

	J.C. Doll, N. Harjee, N. Klejwa, R. Kwon, S.M. Coulthard, B.C. Petzold, M.B. Goodman, and B.L. Pruitt, "[http://www.rsc.org/Publishing/Journals/LC/article.asp?doi=b818622g SU-8 Force Sensing Pillar Arrays for Biological Measurements]," Lab on a Chip, Vol. 9, pages 1449-1454, May 2009.		J.C. Doll, N. Harjee, N. Klejwa, R. Kwon, S.M. Coulthard, B.C. Petzold, M.B. Goodman, and B.L. Pruitt, "[http://www.rsc.org/Publishing/Journals/LC/article.asp?doi=b818622g SU-8 Force Sensing Pillar Arrays for Biological Measurements]," Lab on a Chip, Vol. 9, pages 1449-1454, May 2009.

	S.R. Lockery, K.J. Lawton, J.C. Doll, S. Faumont, S.M. Coulthard, T.R. Thiele, N. Chronis, K.E. McCormick, M.B. Goodman, and B.L. Pruitt, "[http://jn.physiology.org/cgi/reprint/91327.2007v1?maxtoshow=&HITS=10&hits=10&RESULTFORMAT=&author1=lockery&andorexactfulltext=and&searchid=1&FIRSTINDEX=0&sortspec=relevance&resourcetype=HWCIT Artificial dirt: Microfluidic substrates for nematode neurobiology and behavior]," J Neurophysiol, Vol. 99, No. 6, pp. 3136-43, Jun 2008.		S.R. Lockery, K.J. Lawton, J.C. Doll, S. Faumont, S.M. Coulthard, T.R. Thiele, N. Chronis, K.E. McCormick, M.B. Goodman, and B.L. Pruitt, "[http://jn.physiology.org/cgi/reprint/91327.2007v1?maxtoshow=&HITS=10&hits=10&RESULTFORMAT=&author1=lockery&andorexactfulltext=and&searchid=1&FIRSTINDEX=0&sortspec=relevance&resourcetype=HWCIT Artificial dirt: Microfluidic substrates for nematode neurobiology and behavior]," J Neurophysiol, Vol. 99, No. 6, pp. 3136-43, Jun 2008.
-

	===Peer Reviewed Conference Presentations===		===Peer Reviewed Conference Presentations===

AlN on Ti for Piezoelectric Transduction

Jcdoll — Fri, 20 Nov 2009 02:01:55 GMT

Aluminum Nitride on Titanium for Piezoelectric Sensors and Actuators:

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	{{project intro}}		{{project intro}}

-	==Aluminum Nitride on Titanium for Piezoelectric ~~Sensors and Actuators~~==	+	==Aluminum Nitride on Titanium for Piezoelectric Transduction==

	===Contributors===		===Contributors===
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	===Introduction===		===Introduction===
		+	[[Image:AlNCrossSection.jpg\|250px\|right]]
	High-speed, low-power actuators and sensors find numerous applications in microelectromechanical systems (MEMS). Although electrostatic parallel plate and comb drives are widely used for their simplicity, piezoelectric actuators are ideal for applications such as high-speed atomic force microscopy, nanoscale electromechanical switches, resonators and RF filters. Zinc oxide (ZnO) and lead zirconium titanate (PZT) are commonly used piezoelectric materials, but they pose a contamination risk in tools shared with CMOS fabrication processes and can be difficult to process (e.g. low resistivity, composition control, cracking). In contrast, aluminum nitride (AlN) is CMOS compatible and can be deposited by several methods, including reactive sputtering. While the d33 piezoelectric response of AlN is less than that of ZnO or PZT, its other material properties (e.g. high elastic modulus and thermal conductivity, low density) make it ideal for many applications. The deposition of AlN on metal electrodes has been studied extensively for thin film bulk acoustic resonator (FBAR) applications. Although post-CMOS compatible processes have been presented, they utilize non-standard metals (e.g. Cr, Mo, Pt) which limits their process compatibility in many common situations. A deposition and fabrication method for AlN using only standard CMOS metals would enable new applications for piezoelectric transducers in nano- and microscale integrated systems.		High-speed, low-power actuators and sensors find numerous applications in microelectromechanical systems (MEMS). Although electrostatic parallel plate and comb drives are widely used for their simplicity, piezoelectric actuators are ideal for applications such as high-speed atomic force microscopy, nanoscale electromechanical switches, resonators and RF filters. Zinc oxide (ZnO) and lead zirconium titanate (PZT) are commonly used piezoelectric materials, but they pose a contamination risk in tools shared with CMOS fabrication processes and can be difficult to process (e.g. low resistivity, composition control, cracking). In contrast, aluminum nitride (AlN) is CMOS compatible and can be deposited by several methods, including reactive sputtering. While the d33 piezoelectric response of AlN is less than that of ZnO or PZT, its other material properties (e.g. high elastic modulus and thermal conductivity, low density) make it ideal for many applications. The deposition of AlN on metal electrodes has been studied extensively for thin film bulk acoustic resonator (FBAR) applications. Although post-CMOS compatible processes have been presented, they utilize non-standard metals (e.g. Cr, Mo, Pt) which limits their process compatibility in many common situations. A deposition and fabrication method for AlN using only standard CMOS metals would enable new applications for piezoelectric transducers in nano- and microscale integrated systems.

		+	[[Image:Preclean.jpg\|300px\|right]]
	Our aim in this project was to develop a piezoelectric process flow which was compatible with most processing tools available in a research cleanroom. In particularly, we wanted a process that was compatible with the deep reactive ion etcher in the Stanford Nanofabrication Facility (SNF) which is used for releasing our micromachined cantilever structures.		Our aim in this project was to develop a piezoelectric process flow which was compatible with most processing tools available in a research cleanroom. In particularly, we wanted a process that was compatible with the deep reactive ion etcher in the Stanford Nanofabrication Facility (SNF) which is used for releasing our micromachined cantilever structures.

	===AlN on Ti===		===AlN on Ti===
-	~~[[Image:AlNCrossSection.jpg\|250px\|right]]~~	+	AlN is a III-V wide bandgap semiconductor with excellent mechanical, optical and thermal properties which make it useful for a variety of applications, including ultraviolet light emitting diodes. In addition, AlN, like all III-V semiconductors to some extent, can be piezoelectric if deposited properly. When reactively sputtered at low temperature, AlN forms a polycrystalline thin film. If the grains of the film are uniformly oriented and have relatively few dislocations, the film will generate an electric charge in response to mechanical strain and vice versa.
-	AlN is a III-V wide bandgap semiconductor with excellent mechanical, optical and thermal properties which make it useful for a ~~wide~~ variety of applications ~~such as~~ ultraviolet light emitting diodes. In addition, AlN, like all III-V semiconductors to some extent, can be piezoelectric if deposited properly. When reactively sputtered at low temperature, AlN forms a polycrystalline thin film. If the grains of the film are uniformly oriented and have relatively few dislocations, the film will generate an electric charge in response to mechanical strain and vice versa~~. Accordingly, piezoelectric materials can act as either a sensor or actuator~~.	+

-	~~[[Image:Preclean.jpg\|250px\|right]]~~	+	[[Image:ActuationCurves.jpg\|300px\|right]]
-	[[Image:ActuationCurves.jpg\|~~250px~~\|right]]	+	We chose to deposit AlN on Ti due to the relatively small lattice mismatch between the two materials and their etch compatibility with one another. We found that it was necessary to sequentially deposit the AlN immediately after the Ti bottom electrode while maintaining vacuum in order to obtain a favorable crystal orientation of the AlN film. By precleaning the Si wafer before depositing the Ti lead to a further improvement of the <002> orientation of the AlN film. We performed x-ray diffraction (XRD) experiments to assess the film quality for a variety of deposition conditions, but needed to verify that the film structure lead to good piezoelectric properties. To do this, we deposited the thin films on a layer of silicon, which we then etched to form a suspended cantilever beam. By measuring the deflection of the cantilever beam in response to a voltage applied across the AlN thin film we derived the piezoelectric properties of the AlN film.
-	We chose to deposit AlN on Ti due to the relatively small lattice mismatch between the two materials and their etch compatibility with one another. We found that it was necessary to sequentially deposit the AlN immediately after the Ti while maintaining vacuum in order to obtain a favorable crystal orientation of the AlN film. We performed x-ray diffraction (XRD) experiments to assess the film quality for a variety of deposition conditions, but needed to verify that the film structure lead to good piezoelectric properties. To do this, we deposited the thin films on a layer of silicon, which we then etched to form a suspended cantilever beam. By measuring the deflection of the cantilever beam in response to a voltage applied across the AlN thin film we derived the piezoelectric properties of the AlN film.	+

	In the future, we plan to use AlN for a variety of sensor and actuator applications and the relatively straightforward processing of AlN on Ti should enable the more widespread use of piezoelectric transduction in MEMS and NEMS.		In the future, we plan to use AlN for a variety of sensor and actuator applications and the relatively straightforward processing of AlN on Ti should enable the more widespread use of piezoelectric transduction in MEMS and NEMS.

Image:Preclean.jpg

Jcdoll — Fri, 20 Nov 2009 01:57:48 GMT

uploaded "[[Image:Preclean.jpg]]"

New page

AlN on Ti for Piezoelectric Transduction

Jcdoll — Fri, 20 Nov 2009 01:56:11 GMT

first cut

New page

{{project intro}}

==Aluminum Nitride on Titanium for Piezoelectric Sensors and Actuators==

===Contributors===
[[User:Jcdoll|Joey Doll]] and [[User:Petzold|Bryan Petzold]]

===Introduction===
High-speed, low-power actuators and sensors find numerous applications in microelectromechanical systems (MEMS). Although electrostatic parallel plate and comb drives are widely used for their simplicity, piezoelectric actuators are ideal for applications such as high-speed atomic force microscopy, nanoscale electromechanical switches, resonators and RF filters. Zinc oxide (ZnO) and lead zirconium titanate (PZT) are commonly used piezoelectric materials, but they pose a contamination risk in tools shared with CMOS fabrication processes and can be difficult to process (e.g. low resistivity, composition control, cracking). In contrast, aluminum nitride (AlN) is CMOS compatible and can be deposited by several methods, including reactive sputtering. While the d33 piezoelectric response of AlN is less than that of ZnO or PZT, its other material properties (e.g. high elastic modulus and thermal conductivity, low density) make it ideal for many applications. The deposition of AlN on metal electrodes has been studied extensively for thin film bulk acoustic resonator (FBAR) applications. Although post-CMOS compatible processes have been presented, they utilize non-standard metals (e.g. Cr, Mo, Pt) which limits their process compatibility in many common situations. A deposition and fabrication method for AlN using only standard CMOS metals would enable new applications for piezoelectric transducers in nano- and microscale integrated systems.

Our aim in this project was to develop a piezoelectric process flow which was compatible with most processing tools available in a research cleanroom. In particularly, we wanted a process that was compatible with the deep reactive ion etcher in the Stanford Nanofabrication Facility (SNF) which is used for releasing our micromachined cantilever structures.

===AlN on Ti===
[[Image:AlNCrossSection.jpg|250px|right]]
AlN is a III-V wide bandgap semiconductor with excellent mechanical, optical and thermal properties which make it useful for a wide variety of applications such as ultraviolet light emitting diodes. In addition, AlN, like all III-V semiconductors to some extent, can be piezoelectric if deposited properly. When reactively sputtered at low temperature, AlN forms a polycrystalline thin film. If the grains of the film are uniformly oriented and have relatively few dislocations, the film will generate an electric charge in response to mechanical strain and vice versa. Accordingly, piezoelectric materials can act as either a sensor or actuator.

[[Image:Preclean.jpg|250px|right]]
[[Image:ActuationCurves.jpg|250px|right]]
We chose to deposit AlN on Ti due to the relatively small lattice mismatch between the two materials and their etch compatibility with one another. We found that it was necessary to sequentially deposit the AlN immediately after the Ti while maintaining vacuum in order to obtain a favorable crystal orientation of the AlN film. We performed x-ray diffraction (XRD) experiments to assess the film quality for a variety of deposition conditions, but needed to verify that the film structure lead to good piezoelectric properties. To do this, we deposited the thin films on a layer of silicon, which we then etched to form a suspended cantilever beam. By measuring the deflection of the cantilever beam in response to a voltage applied across the AlN thin film we derived the piezoelectric properties of the AlN film.

In the future, we plan to use AlN for a variety of sensor and actuator applications and the relatively straightforward processing of AlN on Ti should enable the more widespread use of piezoelectric transduction in MEMS and NEMS.

===Publications===
J.C. Doll, B.C. Petzold, B. Ninan, R. Mullapudi, B.L. Pruitt, "Aluminum Nitride on Titanium for CMOS Compatible Piezoelectric Transducers," accepted for publication in the Journal of Micromechanics and Microengineering

J.C. Doll, B.C. Petzold, B. Ninan, R. Mullapudi, B.L. Pruitt, "[http://microsystems.stanford.edu/Shared_Files/publications/Doll_Transducers2009_AlN.pdf A High d33 CMOS Compatible Process for Aluminum Nitride on Titanium]", Proceedings of Transducers, 2009.

MEMS Device Development and Metrologies

Jcdoll — Fri, 20 Nov 2009 01:35:05 GMT

fiddled with formatting

←Older revision		Revision as of 01:35, 20 November 2009
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	[[Image:CantileverRender.png\|150px\|left]]		[[Image:CantileverRender.png\|150px\|left]]
	===[[Piezoresistor Design and Optimization]]===		===[[Piezoresistor Design and Optimization]]===
-	We use piezoresistors in many applications for sensing and measurements. The design of piezoresistors trades off sensitivity and noise with process constraints. We have designed set of experiments to test prevailing models and to understand drift and noise as a function of process conditions and have designed a range of piezoresistive MEMS devices: cantilevers for chemical sensing, cantilevers for force sensing, floating element sensors for underwater shear stress measurements.~~<br><br><br>~~	+	We use piezoresistors in many applications for sensing and measurements. The design of piezoresistors trades off sensitivity and noise with process constraints. We have designed set of experiments to test prevailing models and to understand drift and noise as a function of process conditions and have designed a range of piezoresistive MEMS devices: cantilevers for chemical sensing, cantilevers for force sensing, floating element sensors for underwater shear stress measurements.
		+

	[[Image:Coax_tip.jpg\|250px\|right]]		[[Image:Coax_tip.jpg\|250px\|right]]
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	The goal of this research is to design and fabricate custom probes to improve the lateral resolution of scanning gate microscopy (SGM), a technique used to study electron flow and organization in semiconductors. Each cantilever probe has a coaxial tip capable of producing a tightly-confined electric field and a piezoresistor to measure tip deflection without a conventional laser beam bounce setup which can disturb light-sensitive SGM samples. With our probes, SGM can be applied to new samples such as semiconductor nanostructures and in new modes of operation such as mapping of electron wavefunctions in quantum dots.		The goal of this research is to design and fabricate custom probes to improve the lateral resolution of scanning gate microscopy (SGM), a technique used to study electron flow and organization in semiconductors. Each cantilever probe has a coaxial tip capable of producing a tightly-confined electric field and a piezoresistor to measure tip deflection without a conventional laser beam bounce setup which can disturb light-sensitive SGM samples. With our probes, SGM can be applied to new samples such as semiconductor nanostructures and in new modes of operation such as mapping of electron wavefunctions in quantum dots.

-	~~[[Image:Canti.png\|300px\|left]]~~

		+	<div style="clear:both"></div>
		+	[[Image:Canti.png\|300px\|left]]
	===[[Chemical Sensing Using Piezoresistive Cantilevers]]===		===[[Chemical Sensing Using Piezoresistive Cantilevers]]===
	For every chemical reaction there is a change in the shape of the molecules. There are conformation changes of analyte and the binding molecule. The conformation changes can be exploited to design highly sensitive chemical sensors that can function in aquas solutions. As we explore the land of nano-mechanics we use our findings for design of highly sensitive and selective chemical sensors that have femto-molar resolution. By using piezo resistive cantilever we have eliminated the problem of read out. Allowing cantilevers to be a viable option for multi-analyte sensing.		For every chemical reaction there is a change in the shape of the molecules. There are conformation changes of analyte and the binding molecule. The conformation changes can be exploited to design highly sensitive chemical sensors that can function in aquas solutions. As we explore the land of nano-mechanics we use our findings for design of highly sensitive and selective chemical sensors that have femto-molar resolution. By using piezo resistive cantilever we have eliminated the problem of read out. Allowing cantilevers to be a viable option for multi-analyte sensing.


		+	<div style="clear:both"></div>
	[[Image:MRFMexpsetup.jpg\|250px\|right]]		[[Image:MRFMexpsetup.jpg\|250px\|right]]
-
	===[[Ultrasmall Cantilevers for Magnetic Resonance Force Microscopy]]===		===[[Ultrasmall Cantilevers for Magnetic Resonance Force Microscopy]]===
	The goal of this work is to design, fabricate, and use ultrasmall cantilevers for improved resolution in Magnetic Resonance Force Microscopy (MRFM). By coupling nuclear spins to cantilever resonance, MRFM has demonstrated chemically-specific three-dimensional imaging with nanometer scale resolution. Ultrasmall silicon cantilevers with high resonant frequency, high quality factor, and low stiffness should improve signal-to-noise in MRFM, enabling imaging and structure determination for interesting biological samples including virus particles, proteins and other complex molecule. This work is done in collaboration with IBM Almaden Research Center.		The goal of this work is to design, fabricate, and use ultrasmall cantilevers for improved resolution in Magnetic Resonance Force Microscopy (MRFM). By coupling nuclear spins to cantilever resonance, MRFM has demonstrated chemically-specific three-dimensional imaging with nanometer scale resolution. Ultrasmall silicon cantilevers with high resonant frequency, high quality factor, and low stiffness should improve signal-to-noise in MRFM, enabling imaging and structure determination for interesting biological samples including virus particles, proteins and other complex molecule. This work is done in collaboration with IBM Almaden Research Center.

-	~~<div style="clear:both"></div>~~

-	[[Image:AlNCrossSection.jpg\|250px\|~~right~~]]	+	<div style="clear:both"></div>
-	===[[~~Aluminum Nitride~~ on ~~Titanium~~ for Piezoelectric Transduction]]===	+	[[Image:AlNCrossSection.jpg\|250px\|left]]
		+	===[[AlN on Ti for Piezoelectric Transduction]]===
	High-speed, low-power actuators and sensors find numerous applications in microelectromechanical systems (MEMS) and piezoelectric actuators are ideal for many high speed applications such as scanning probes, resonators and RF filters. Zinc oxide (ZnO) and lead zirconium titanate (PZT)are commonly used piezoelectric materials, but they pose a contamination risk in tools shared with CMOS fabrication processes and can be difficult to process (e.g. low resistivity, composition control, cracking). In contrast, aluminum nitride (AlN) is CMOS compatible and can be deposited by several methods, including reactive sputtering. The deposition of AlN on metal electrodes has been studied extensively for thin film bulk acoustic resonator (FBAR) applications. Although post-CMOS compatible processes have been presented, they utilize non-standard metals (e.g. Cr, Mo, Pt) which limits their process compatibility in many common situations. We have developed a deposition and fabrication methods using AlN on titanium to address the need for wider process compatibility of piezoelectric MEMS.		High-speed, low-power actuators and sensors find numerous applications in microelectromechanical systems (MEMS) and piezoelectric actuators are ideal for many high speed applications such as scanning probes, resonators and RF filters. Zinc oxide (ZnO) and lead zirconium titanate (PZT)are commonly used piezoelectric materials, but they pose a contamination risk in tools shared with CMOS fabrication processes and can be difficult to process (e.g. low resistivity, composition control, cracking). In contrast, aluminum nitride (AlN) is CMOS compatible and can be deposited by several methods, including reactive sputtering. The deposition of AlN on metal electrodes has been studied extensively for thin film bulk acoustic resonator (FBAR) applications. Although post-CMOS compatible processes have been presented, they utilize non-standard metals (e.g. Cr, Mo, Pt) which limits their process compatibility in many common situations. We have developed a deposition and fabrication methods using AlN on titanium to address the need for wider process compatibility of piezoelectric MEMS.


-	[[Image:CellTensile.jpg\|300px\|~~left~~]]	+	<div style="clear:both"></div>
-		+	[[Image:CellTensile.jpg\|300px\|right]]
	=== Electrostatic actuators for cell mechanics measurements ===		=== Electrostatic actuators for cell mechanics measurements ===
	We have developed an electrostatic actuator based device in silicon to enable force measurements on adherent cells. One of the important constraints for the device is to enable actuation in conducting liquid media such as biological buffers which are required to maintain live cell function. We designed novel MEMS electrostatic actuators with high frequency AC modulation that can be immersed and operated in liquid solutions. Such a device has been developed to measure mechanical properties in epithelial cells such as stiffness, adhesion, hysteresis and visco-elasticity. The devices will be developed into fully controllable systems to deliver precise forces to study the dynamics of cellular systems.		We have developed an electrostatic actuator based device in silicon to enable force measurements on adherent cells. One of the important constraints for the device is to enable actuation in conducting liquid media such as biological buffers which are required to maintain live cell function. We designed novel MEMS electrostatic actuators with high frequency AC modulation that can be immersed and operated in liquid solutions. Such a device has been developed to measure mechanical properties in epithelial cells such as stiffness, adhesion, hysteresis and visco-elasticity. The devices will be developed into fully controllable systems to deliver precise forces to study the dynamics of cellular systems.

	In order to controllably measure from and impart forces onto biological samples, feedback control systems are necessary to compensate for fluctuations in the force-generating electrical gradients. Mixing electrical circuits with liquid ionic media introduces challenges unseen in conventional semiconductor technology. We have designed circuits for printed circuit boards to integrate the necessary mixers, amplifiers, and decision modules into a compact package that can be interfaced with microfluidic networks for easily and quickly introducing biological samples to be analyzed. Such an endeavor requires knowledge of circuit design, MEMS fabrication, and basic electrochemistry.		In order to controllably measure from and impart forces onto biological samples, feedback control systems are necessary to compensate for fluctuations in the force-generating electrical gradients. Mixing electrical circuits with liquid ionic media introduces challenges unseen in conventional semiconductor technology. We have designed circuits for printed circuit boards to integrate the necessary mixers, amplifiers, and decision modules into a compact package that can be interfaced with microfluidic networks for easily and quickly introducing biological samples to be analyzed. Such an endeavor requires knowledge of circuit design, MEMS fabrication, and basic electrochemistry.
-	~~<br>~~	+
-	~~<br>~~	+
-	[[Image:Channel_ink2.jpg\|\|200px\|~~right\|thumb\|Stretchable Cell Culture Array~~]]	+	[[Image:Channel_ink2.jpg\|200px\|left]]
	=== [[Polymer MEMS]] ===		=== [[Polymer MEMS]] ===
	We are developing the processes of Polymer materials such as Parylene, Polyacrylamide, Photopatternable epoxy(SU-8), (poly)NiPAAm, and PDMS(polydimethylsiloxane elastomer) as flexible and bio-compatible subrates for biological application. The applications of the processes include the Miro Force Post, Stretchable Cell Culture Array, Microfluidic delivery system, and electrical stimulation on cells, and protein patterning.		We are developing the processes of Polymer materials such as Parylene, Polyacrylamide, Photopatternable epoxy(SU-8), (poly)NiPAAm, and PDMS(polydimethylsiloxane elastomer) as flexible and bio-compatible subrates for biological application. The applications of the processes include the Miro Force Post, Stretchable Cell Culture Array, Microfluidic delivery system, and electrical stimulation on cells, and protein patterning.

Image:AlNCrossSection.jpg

Jcdoll — Fri, 20 Nov 2009 01:31:25 GMT

uploaded "[[Image:AlNCrossSection.jpg]]"

New page